DEFECTS AT SURFACES AND INTERFACES: A SCATTERING THEORETICAL APPROACHPOLLMANN J.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 7; PP. 587-590; BIBL. 16 REF.Article

LOCALIZATION OF ELECTRONIC STATES AT FREE SEMICONDUCTOR SURFACESPOLLMANN J; PANTELIDES ST.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 4; PP. 1740-1742; BIBL. 5 REF.Article

NEW EVIDENCE FOR ASYMMETRIC DIMER RECONSTRUCTION ON THE SI(100)-(2 X 1) SURFACEMAZUR A; POLLMANN J.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 7086-7089; BIBL. 27 REF.Article

SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES: THE (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO₂POLLMANN J; PANTELIDES ST.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 10; PP. 5524-5544; BIBL. 76 REF.Article

UPPER BOUNDS FOR THE GROUND-STATE ENERGY OF THE EXCITON-PHONON SYSTEM.POLLMANN J; BUTTNER H.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 9; PP. 1171-1174; BIBL. 15 REF.Article

BINDING ENERGIES AND WAVE FUNCTIONS OF WANNIER EXCITONS IN UNIAXIAL CRYSTALS. A MODIFIED PERTURBATION APPROACH. II. APPLICATIONS.GERLACH B; POLLMANN J.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 67; NO 2; PP. 477-485; ABS. ALLEM.; BIBL. 10 REF.Article

ELECTRONIC STRUCTURE OF IDEAL AND RELAXED SURFACES OF ZNO: A PROTOTYPE IONIC WURTZITE SEMICONDUCTOR AND ITS SURFACE PROPERTIESIVANOV I; POLLMANN J.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 7275-7296; BIBL. DISSEM.Article

NEW METHOD FOR THE ELECTRONIC STRUCTURE OF HETEROJUNCTIONS: APPLICATION TO THE (100)GE-GAAS INTERFACESPOLLMANN J; PANTELIDES ST.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 10; PP. 621-625; BIBL. 20 REF.Article

GROUND-STATE ENERGY OF THE EXCITON-PHONON SYSTEM IN A MAGNETIC FIELD.BEHNKE G; BUTTNER H; POLLMANN J et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 9; PP. 873-876; BIBL. 15 REF.Article

ELECTRONIC STRUCTURE OF IDEAL AND RELAXED INSB (110) SURFACESSCHMEITS M; MAZUR A; POLLMANN J et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 12; PP. 1081-1084; BIBL. 13 REF.Article

THE IDEAL(111), (110) AND (100) SURFACES OF SI, GE AND GAAS; A COMPARISON OF THEIR ELECTRONIC STRUCTUREIVANOV I; MAZUR A; POLLMANN J et al.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 92; NO 2-3; PP. 365-384; BIBL. 46 REF.Article

ANGULAR-RESOLVED INITIAL STATE SPECTRA FOR THE RELAXED GAAS (110) SURFACEMAZUR A; POLLMANN J; SCHMEITS M et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 1; PP. 37-41; BIBL. 12 REF.Article

First-principles theory of sulfur adsorption on semi-infinite Ge(001)KRUGER, P; POLLMANN, J.Physical review letters. 1990, Vol 64, Num 15, pp 1808-1811, issn 0031-9007Article

Unitized radial shaft seals for engine applicationsPOLLMANN, J; SEIDL, J. H.SAE transactions. 1990, Vol 99, Num 2, pp 813-821, issn 0096-736XArticle

Bond-angle relaxation and electronic structure of Si and Ge overlayers on (110) surfaces of III-V semiconductorsKALLA, R; POLLMANN, J.Surface science. 1988, Vol 200, Num 1, pp 80-100, issn 0039-6028Article

Ab initio calculations of Si, As, S, Se, and Cl adsorption on Si(001) surfacesKRÜGER, P; POLLMANN, J.Physical review. B, Condensed matter. 1993, Vol 47, Num 4, pp 1898-1910, issn 0163-1829Article

Anisotropy of the mean-square displacelents at the Si(001)-(2×1) surfaceMAZUR, A; POLLMANN, J.Surface science. 1990, Vol 225, Num 1-2, pp 72-80, issn 0039-6028Article

Adsorption of sulfur on Ge(001) : first-principles calculation of structural and electronic propertiesKRUÊGER, P; POLLMANN, J.Vacuum. 1990, Vol 41, Num 1-3, pp 638-639, issn 0042-207X, 2 p.Conference Paper

Green's-function studies of Ge adsorption on GaAs(110)KRÜGER, P; POLLMANN, J.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3406-3421, issn 0163-1829Article

ANGLE-RESOLVED PHOTOEMISSION FROM POLAR AND NONPOLAR ZINC OXIDE SURFACESGOPEL W; POLLMANN J; IVANOV I et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3144-3150; BIBL. 19 REF.Article

Excitons in a homogeneous magnetic field: a modified perturbation approachGERLACH, B; RICHTER, D; POLLMANN, J et al.Zeitschrift für Physik. B, Condensed matter. 1987, Vol 66, Num 4, pp 419-425, issn 0722-3277Article

The band structure of Si_xGe_1-x alloys: the self-consistent virtual-crystal approximationPODGORNY, M; WOLFGARTEN, G; POLLMANN, J et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 7, pp L141-L146, issn 0022-3719Article

The use of resonant X-ray magnetic scattering to examine the magnetic phases in UAs-USe solid solutionsLONGFIELD, M. J; WILMSHURST, J; HASKEL, D et al.Journal of magnetism and magnetic materials. 2001, Vol 233, Num 1-2, pp 53-56, issn 0304-8853Conference Paper

Surface passivation of GaAs(001) by sulfur : ab initio studiesHIRSCH, G; KRÜGER, P; POLLMANN, J et al.Surface science. 1998, Vol 402-04, pp 778-781, issn 0039-6028Conference Paper

Electronic structure of aluminum surfaces : results from empirical tight-binding scattering theoryWÜRDE, K; MAZUR, A; POLLMANN, J et al.Physica status solidi. B. Basic research. 1993, Vol 179, Num 2, pp 399-410, issn 0370-1972Article